Irradiation effects in InGaAs/InAlAs high electron mobility transistors
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Abstract
The radiation tolerance of high electron mobility transistors (HEMTs) based on InGaAs/InAlAs lattice matched to InP has been studied. At low fluences of 3 MeV He+ ions, the only effect is a reduction in the leakage currents. At higher fluences, the drain current decreases, the threshold voltage increases toward zero, and the transconductance decreases. These results are consistent with increased trapping in the donor layer and increased scattering in the channel layer. Radiation-induced increases in the threshold voltage occur three to nine times more slowly here than in GaAs/AlGaAs HEMTs, indicating high radiation tolerance. © 2001 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Irradiation effects in InGaAs/InAlAs high electron mobility transistors</title><author><name sortKey="Jackson, E M" uniqKey="Jackson E">E. M. Jackson</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>SFA, Incorporated, 1401 McCormick Drive, Largo, Maryland 20875</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Maryland</region></placeName><wicri:cityArea>SFA, Incorporated, 1401 McCormick Drive, Largo</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Naval Research Laboratory, Code 6818, Washington, DC 20375</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">District de Columbia</region></placeName><wicri:cityArea>Naval Research Laboratory, Code 6818, Washington</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="04"><s1>University of Notre Dame, Notre Dame, Indiana 46556</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Indiana</region></placeName><wicri:cityArea>University of Notre Dame, Notre Dame</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="05"><s1>Rockwell Science Center, 1049 Camino Dos Rios, Thousand Oaks, California 91358</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>Rockwell Science Center, 1049 Camino Dos Rios, Thousand Oaks</wicri:cityArea></affiliation></author><author><name sortKey="Weaver, B D" uniqKey="Weaver B">B. D. Weaver</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>SFA, Incorporated, 1401 McCormick Drive, Largo, Maryland 20875</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Maryland</region></placeName><wicri:cityArea>SFA, Incorporated, 1401 McCormick Drive, Largo</wicri:cityArea></affiliation></author><author><name sortKey="Shojah Ardalan, S" uniqKey="Shojah Ardalan S">S. Shojah Ardalan</name></author><author><name sortKey="Wilkins, R" uniqKey="Wilkins R">R. Wilkins</name></author><author><name sortKey="Seabaugh, A C" uniqKey="Seabaugh A">A. C. Seabaugh</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>SFA, Incorporated, 1401 McCormick Drive, Largo, Maryland 20875</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Maryland</region></placeName><wicri:cityArea>SFA, Incorporated, 1401 McCormick Drive, Largo</wicri:cityArea></affiliation></author><author><name sortKey="Brar, B" uniqKey="Brar B">B. Brar</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>SFA, Incorporated, 1401 McCormick Drive, Largo, Maryland 20875</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Maryland</region></placeName><wicri:cityArea>SFA, Incorporated, 1401 McCormick Drive, Largo</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">01-0395563</idno><date when="2001-10-01">2001-10-01</date><idno type="stanalyst">PASCAL 01-0395563 AIP</idno><idno type="RBID">Pascal:01-0395563</idno><idno type="wicri:Area/Main/Corpus">010882</idno><idno type="wicri:Area/Main/Repository">00FD36</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium compounds</term><term>Experimental study</term><term>Gallium arsenides</term><term>High electron mobility transistors</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Ion beam effects</term><term>Leakage currents</term><term>Semiconductor device testing</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>8530T</term><term>6180J</term><term>6182F</term><term>8530D</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium arséniure</term><term>Transistor mobilité électron élevée</term><term>Effet faisceau ion</term><term>Courant fuite</term><term>Essai dispositif semiconducteur</term><term>Semiconducteur III-V</term><term>Aluminium composé</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The radiation tolerance of high electron mobility transistors (HEMTs) based on InGaAs/InAlAs lattice matched to InP has been studied. At low fluences of 3 MeV He<sup>+</sup> ions, the only effect is a reduction in the leakage currents. At higher fluences, the drain current decreases, the threshold voltage increases toward zero, and the transconductance decreases. These results are consistent with increased trapping in the donor layer and increased scattering in the channel layer. Radiation-induced increases in the threshold voltage occur three to nine times more slowly here than in GaAs/AlGaAs HEMTs, indicating high radiation tolerance. © 2001 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>79</s2></fA05><fA06><s2>14</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Irradiation effects in InGaAs/InAlAs high electron mobility transistors</s1></fA08><fA11 i1="01" i2="1"><s1>JACKSON (E. M.)</s1></fA11><fA11 i1="02" i2="1"><s1>WEAVER (B. D.)</s1></fA11><fA11 i1="03" i2="1"><s1>SHOJAH ARDALAN (S.)</s1></fA11><fA11 i1="04" i2="1"><s1>WILKINS (R.)</s1></fA11><fA11 i1="05" i2="1"><s1>SEABAUGH (A. C.)</s1></fA11><fA11 i1="06" i2="1"><s1>BRAR (B.)</s1></fA11><fA14 i1="01"><s1>SFA, Incorporated, 1401 McCormick Drive, Largo, Maryland 20875</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA14 i1="02"><s1>Naval Research Laboratory, Code 6818, Washington, DC 20375</s1></fA14><fA14 i1="03"><s1>Prairie View A&M University, Prairie View, Texas 77446</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="04"><s1>University of Notre Dame, Notre Dame, Indiana 46556</s1></fA14><fA14 i1="05"><s1>Rockwell Science Center, 1049 Camino Dos Rios, Thousand Oaks, California 91358</s1></fA14><fA20><s1>2279-2281</s1></fA20><fA21><s1>2001-10-01</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2001 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>01-0395563</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>The radiation tolerance of high electron mobility transistors (HEMTs) based on InGaAs/InAlAs lattice matched to InP has been studied. At low fluences of 3 MeV He<sup>+</sup> ions, the only effect is a reduction in the leakage currents. At higher fluences, the drain current decreases, the threshold voltage increases toward zero, and the transconductance decreases. These results are consistent with increased trapping in the donor layer and increased scattering in the channel layer. 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